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Freescale Semiconductor Technical Data
Document Number: MRFE6S9135H Rev. 1, 11/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. * Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 39 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain -- 21 dB Drain Efficiency -- 32.3% Device Output Signal PAR -- 6.4 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset -- - 39.5 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, Pout = 180 W CW (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Optimized for Doherty Applications * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRFE6S9135HR3 MRFE6S9135HSR3
940 MHz, 39 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465B - 03, STYLE 1 NI - 880 MRFE6S9135HR3
CASE 465C - 02, STYLE 1 NI - 880S MRFE6S9135HSR3
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TC TJ Value - 0.5, +66 - 0.5, +12 - 65 to +150 150 225 Unit Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 136 W CW Case Temperature 80C, 39 W CW Symbol RJC Value (2,3) 0.39 0.48 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2007. All rights reserved.
MRFE6S9135HR3 MRFE6S9135HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class II (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 66 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1000 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2.8 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss -- -- -- 1.3 410 343 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) 1.4 2.2 0.15 2.1 2.9 0.2 2.9 3.7 0.35 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 10 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 39 W Avg. W - CDMA, f = 940 MHz, Single- Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. (continued) Gps D PAR ACPR IRL 20 30.5 6.1 -- -- 21 32.3 6.4 - 39.5 - 15 23 -- -- - 38 -9 dB % dB dBc dB
MRFE6S9135HR3 MRFE6S9135HSR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Video Bandwidth @ 160 W PEP Pout where IM3 = - 30 dBc (Tone Spacing from 100 kHz to VBW) IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) Gain Flatness in 40 MHz Bandwidth @ Pout = 39 W Avg. Average Deviation from Linear Phase in 40 MHz Bandwidth @ Pout = 135 W CW Average Group Delay @ Pout = 135 W CW, f = 940 MHz Part - to - Part Insertion Phase Variation @ Pout = 135 W CW, f = 940 MHz, Six Sigma Window Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) Symbol VBW -- 10 -- Min Typ Max Unit MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, 920 - 960 MHz Bandwidth
GF Delay G P1dB
-- -- -- -- -- --
0.3 1 3.6 19 0.015 0.01
-- -- -- -- -- --
dB ns dB/C dBm/C
MRFE6S9135HR3 MRFE6S9135HSR3 RF Device Data Freescale Semiconductor 3
B1 VBIAS R2 + C4 C5
+ R3 Z7 C6 R1 Z9 Z10 C8 Z11 C11 Z12 C12 Z13 Z14 C20 C21 C22 C23 C24
VSUPPLY
RF OUTPUT Z15 Z16 C25 Z17
RF INPUT
Z1 C1
Z2
Z3
Z4
Z5
Z6 C7 C9 C10 C13 C14
C2
C3
DUT Z8 + C15 C16 C17 C18 C19 VSUPPLY
Z1 Z2 Z3 Z4 Z5 Z6 Z7, Z8 Z9 Z10
0.263 x 0.065 Microstrip 0.310 x 0.065 Microstrip 0.910 x 0.120 Microstrip 0.248 x 1.020 x 0.120 Taper 0.363 x 1.020 Microstrip 0.057 x 1.120 Microstrip 0.823 x 0.120 Microstrip 0.060 x 0.980 Microstrip 0.149 x 0.980 Microstrip
Z11 Z12 Z13 Z14 Z15 Z16 Z17 PCB
0.202 x 0.980 x 0.444 Taper 0.114 x 0.444 Microstrip 0.145 x 0.444 x 0.110 Taper 0.180 x 0.110 Microstrip 0.585 x 0.110 Microstrip 0.443 x 0.065 Microstrip 0.274 x 0.065 Microstrip Taconic RF - 35, 0.030, r = 3.5
Figure 1. MRFE6S9135HR3(HSR3) Test Circuit Schematic
Table 5. MRFE6S9135HR3(HSR3) Test Circuit Component Designations and Values
Part B1 C1, C6, C15, C20, C25 C2, C14 C3 C4 C5, C16, C17, C18, C21, C22, C23 C7, C8 C9, C10, C11, C12, C13 C19, C24 R1, R3 R2 Short RF Bead 39 pF Chip Capacitors 0.8- 8.0 pF Variable Capacitors, Gigatrim 2.0 pF Chip Capacitor 33 F, 25 V Electrolytic Capacitor 10 F, 50 V Chip Capacitors 6.8 pF Chip Capacitors 4.7 pF Chip Capacitors 470 F, 63 V Electrolytic Capacitors 3.3 , 1/3 W Chip Resistors 2.2 K, 1/4 W Chip Resistor Description Part Number 2743019447 ATC100B390JT500XT 27291SL ATC100B2R0JT500XT EMVY250ADA330MF55G GRM55DR61H106KA88B ATC100B6R8JT500XT ATC100B4R7JT500XT EKME630ELL471MK25S CRCW12103R30FKEA CRCW12062201FKEA Manufacturer Fair- Rite ATC Johanson ATC Nippon Chemi - Con Murata ATC ATC United Chemi - Con Vishay Vishay
MRFE6S9135HR3 MRFE6S9135HSR3 4 RF Device Data Freescale Semiconductor
C24 R3 B1 R2
C5
C6
C20
C21 C22
C4
C23 C3 R1 C8 C11 C12 CUT OUT AREA C9 C10 C13 C7 C18 C14 C25
C1
C2
C15
C16 C17
MRFE6S9135H Rev. 1
C19
Figure 2. MRFE6S9135HHR3(HSR3) Test Circuit Component Layout
MRFE6S9135HR3 MRFE6S9135HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
22 21 20 Gps, POWER GAIN (dB) 19 18 17 16 PARC 15 14 860 IRL 880 900 920 940 960 980 1000 -1.2 -1.5 1020 Gps VDD = 28 Vdc, Pout = 39 W (Avg.) IDQ = 1000 mA, Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) D 33 32 31 30 -0.3 PARC (dBc) -0.6 -0.9 D, DRAIN EFFICIENCY (%)
0 -5 -10 -15 -20
f, FREQUENCY (MHz)
Figure 3. Single - Carrier W - CDMA Broadband Performance @ Pout = 39 Watts Avg.
21 20 19 Gps, POWER GAIN (dB) 18 17 16 15 14 13 860 PARC IRL 880 900 920 940 960 980 1000 D VDD = 28 Vdc, Pout = 80 W (Avg.) IDQ = 1000 mA, Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) Gps 46 45 44 43 -2.4 PARC (dBc) -2.6 -2.8 -3 -3.2 1020 D, DRAIN EFFICIENCY (%)
0 -5 -10 -15 -20
f, FREQUENCY (MHz)
Figure 4. Single - Carrier W - CDMA Broadband Performance @ Pout = 80 Watts Avg.
22 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1500 mA 21 Gps, POWER GAIN (dB) 1250 mA 1000 mA 20 750 mA 19 500 mA VDD = 28 Vdc, f1 = 935 MHz, f2 = 945 MHz Two-Tone Measurements 17 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP -10 VDD = 28 Vdc, f1 = 935 MHz, f2 = 945 MHz Two-Tone Measurements
-20
-30
IDQ = 500 mA 750 mA
-40
18
-50
1000 mA 1500 mA
1250 mA
-60 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRFE6S9135HR3 MRFE6S9135HSR3 6 RF Device Data Freescale Semiconductor
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) -10 -20 -30 -40 -50 -60 -70 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP 7th Order 3rd Order 5th Order VDD = 28 Vdc, IDQ = 1000 mA, f1 = 935 MHz f2 = 945 MHz, Two-Tone Measurements 0 -10 -20 -30 -40 -50 -60 1 10 TWO-TONE SPACING (MHz) 100 IM7-U IM7-L IM3-U IM3-L IM5-U IM5-L VDD = 28 Vdc, Pout = 160 W (PEP) IDQ = 1000 mA, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 940 MHz
Figure 7. Intermodulation Distortion Products versus Output Power
1 OUTPUT COMPRESSION AT THE 0.01% PROBABILITY ON CCDF (dB)
Figure 8. Intermodulation Distortion Products versus Tone Spacing
55
Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth D, DRAIN EFFICIENCY (%) 0 -1 -2 -3 -3 dB = 85.92 W -4 -5 20 VDD = 28 Vdc, IDQ = 1000 mA, f = 940 MHz Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) 30 40 50 60 70 80 90 Actual 30 -1 dB = 38.71 W -2 dB = 54.21 W 35 Ideal 50 45 40
25 100
Pout, OUTPUT POWER (WATTS)
Figure 9. Output Peak - to - Average Ratio Compression (PARC) versus Output Power
23 22 Gps, POWER GAIN (dB) 21 20 19 18 17 16 1 10 Pout, OUTPUT POWER (WATTS) CW 100 D VDD = 28 Vdc IDQ = 1000 mA f = 940 MHz 85_C Gps TC = -30_C 25_C 85_C 50 40 30 20 10 0 300 70 22 IDQ = 1000 mA f = 940 MHz D, DRAIN EFFICIENCY (%) 21 Gps, POWER GAIN (dB)
-30_C
25_C 60
20
19
18 VDD = 24 V 17 0 20 40 60 Pout, OUTPUT POWER (WATTS) CW 28 V 32 V
80 100 120 140 160 180 200 220 240
Figure 10. Power Gain and Drain Efficiency versus CW Output Power
Figure 11. Power Gain versus Output Power
MRFE6S9135HR3 MRFE6S9135HSR3 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS
108
MTTF (HOURS)
107
106
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 39 W Avg., and D = 32.3%. MTTF calculator available at http:/www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 12. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100 10 -30 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF Compressed Output Signal @ 39 W Pout Input Signal -50 (dB) -60 -70 -80 -90 -100 -110 -9 -7.2 -5.4 -3.6 -1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) -ACPR in 3.84 MHz Integrated BW -ACPR in 3.84 MHz Integrated BW -40 -10 -20 3.84 MHz Channel BW
Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal
Figure 14. Single - Carrier W - CDMA Spectrum
MRFE6S9135HR3 MRFE6S9135HSR3 8 RF Device Data Freescale Semiconductor
f = 980 MHz f = 820 MHz Zload Zo = 10
Zsource f = 820 MHz f = 980 MHz
VDD = 28 Vdc, IDQ = 1000 mA, Pout = 39 W Avg. f MHz 820 840 860 880 900 920 940 960 980 Zsource W 3.39 - j6.99 3.32 - j6.86 3.05 - j6.74 2.72 - j6.47 2.46 - j6.16 2.41 - j5.80 2.41 - j5.58 2.38 - j5.45 2.13 - j5.38 Zload W 2.18 - j0.80 2.20 - j0.71 2.21 - j0.66 2.20 - j0.64 2.20 - j0.64 2.18 - j0.62 2.13 - j0.63 2.03 - j0.66 1.87 - j0.70
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance MRFE6S9135HR3 MRFE6S9135HSR3 RF Device Data Freescale Semiconductor 9
PACKAGE DIMENSIONS
B G
1 2X
Q bbb
M
TA
M
B
M
(FLANGE) 3
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. DELETED INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF
K D TA
2
bbb
M
M
B M
M (INSULATOR)
R ccc
M
(LID) M (INSULATOR) M
bbb ccc H
M
TA TA
M
B B
M
TA
M
B S
N
M M M
(LID)
aaa C
M
TA
M
B
DIM A B C D E F G H K M N Q R S aaa bbb ccc
F E A
(FLANGE)
T A
SEATING PLANE
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 465B - 03 ISSUE D NI - 880 MRFE6S9135HR3
B
1
(FLANGE)
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF
K D TA
2
bbb
M
M
B M
M
(INSULATOR)
R ccc
M
(LID) M (INSULATOR) M
bbb ccc H
M
TA TA
M
B B
M
TA TA
M
B S B
N
M M M
(LID)
aaa
M
M
DIM A B C D E F H K M N R S aaa bbb ccc
C F E A
(FLANGE)
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
T A
SEATING PLANE
CASE 465C - 02 ISSUE D NI - 880S MRFE6S9135HSR3
MRFE6S9135HR3 MRFE6S9135HSR3 10 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 Date Nov. 2007 Nov. 2007 * Initial Release of Data Sheet * Updated Fig. 12, MTTF versus Junction Temperature, to reflect a 32.3% typical efficiency rating, p. 8 Description
MRFE6S9135HR3 MRFE6S9135HSR3 RF Device Data Freescale Semiconductor 11
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MRFE6S9135HR3 MRFE6S9135HSR3
Rev. 12 1, 11/2007 Document Number: MRFE6S9135H
RF Device Data Freescale Semiconductor

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